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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.).
2 E
KDS142E
SILICON EPITAXIAL PLANAR DIODE
B D 3
DIM A B
C D E G H J
MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10
0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05
A
G
1
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 20 20 200 * 100 * 300 * 100 150 -55 150
UNIT V V mA mA mA mW
1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
2 1 3
C
MAXIMUM RATING (Ta=25
)
H
J
ESM
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
Marking
DS
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Reverse Current
)
TEST CONDITION IF=10mA VR=15V MIN. TYP. MAX. 1.0 0.1 UNIT V A VF IR
SYMBOL
2003. 1. 27
Revision No : 0
1/2
KDS142E
IF
100 FORWARD CURRENT I F (mA)
D1
- VF
100
D1+D2
IF
FORWARD CURRENT I F (mA)
D2
- VF
10
10
Ta=1 25 C Ta=7 5C
Ta=12 5C Ta=75 C Ta=25 Ta=-25 C C
0.1
Ta= 125 C Ta= 75 C Ta= 25 C Ta=-2 5C
1
1
0.1
0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE VF (V)
0.01 0 0.4 0.8 1.2 1.6 FORWARD VOLTAGE VF (V)
I R - VR
100
Ta=125 C D1 D2 D1 D2 D1 D2
C T - VR
10 TOTAL CAPACITANCE CT (pF) 5 3
(D1) (D1+D2) (D2) f=1MHz
REVERSE CURRENT IR (nA)
10
Ta=125 C Ta=100 C Ta=100 C Ta=75 C Ta=75 C
1
0.1
1 0.5
0.01 0 5 10 15 REVERSE VOLTAGE VR (V)
0.5
1
3
Ta=25 C Ta=-2 5C
10
30
REVERSE VOLTAGE VR (V)
2003. 1. 27
Revision No : 0
2/2

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